| CQWM |
NONDERATED CONTINUOUS VOLTAGE RATING AND TYPE PER SECTION |
50.0 DC SINGLE SECTION |
| CQJJ |
NONDERATED OPERATING TEMP |
-55.0 DEG CELSIUS MINIMUM AND 125.0 DEG CELSIUS MAXIMUM |
| ZZZK |
SPECIFICATION/STANDARD DATA |
81349-MIL-C-55681/4 GOVERNMENT SPECIFICATION |
| TEST |
TEST DATA DOCUMENT |
81349-MIL-C-55681 SPECIFICATION |
| AARG |
RELIABILITY INDICATOR |
ESTABLISHED |
| CQBQ |
CAPACITANCE VALUE PER SECTION |
1.000 NANOFARADS SINGLE SECTION |
| TTQY |
TERMINAL TYPE AND QUANTITY |
2 BONDING PAD |
| CRTP |
TOLERANCE RANGE PER SECTION |
-10.00/+10.00 PERCENT SINGLE SECTION |
| ADAQ |
BODY LENGTH |
0.110 INCHES NOMINAL |
| ABJT |
TERMINAL LENGTH |
0.015 INCHES NOMINAL |
| AAQL |
BODY STYLE |
CHIP TYPE |
| ADAT |
BODY WIDTH |
0.110 INCHES NOMINAL |
| CWPM |
DISSIPATION FACTOR AT REFERENCE TEMP IN PERCENT |
0.050 |
| CWJK |
CASE MATERIAL |
CERAMIC |
| ADAU |
BODY HEIGHT |
0.030 INCHES MINIMUM AND 0.102 INCHES MAXIMUM |
| CRHD |
TOLERANCE OF TEMP COEFFICIENT PER SECTION IN PPM PER DEG CELSIUS |
-20.0/+20.0 SINGLE SECTION |
| CWPK |
INSULATION RESISTANCE AT REFERENCE TEMP |
100000.0 MEGOHMS |
| AEBZ |
SCHEMATIC DIAGRAM DESIGNATOR |
NO COMMON OR GROUNDED ELECTRODE(S) |
| AARH |
RELIABILITY FAILURE RATE LEVEL IN PERCENT |
1.000 |
| CQLZ |
TEMP COEFFICIENT OF CAPACITANCE PER SECTION IN PPM PER DEG CELSIUS |
90.0 SINGLE SECTION |