| CWQH |
DC LEAKAGE AT REFERENCE TEMP |
1.000 MICROAMPERES |
| TEST |
TEST DATA DOCUMENT |
81349-MIL-C-55365 SPECIFICATION |
| CWPM |
DISSIPATION FACTOR AT REFERENCE TEMP IN PERCENT |
4.000 |
| CQLH |
DC LEAKAGE AT MAXIMUM OPERATING TEMP |
10.0 MICROAMPERES |
| ZZZK |
SPECIFICATION/STANDARD DATA |
81349-MIL-C-55365/2D GOVERNMENT SPECIFICATION |
| ADAU |
BODY HEIGHT |
0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM |
| CQBQ |
CAPACITANCE VALUE PER SECTION |
1.000 MICROFARADS SINGLE SECTION |
| AARG |
RELIABILITY INDICATOR |
ESTABLISHED |
| TTQY |
TERMINAL TYPE AND QUANTITY |
2 BONDING PAD |
| AECE |
ANODE TYPE |
SOLID |
| CRTP |
TOLERANCE RANGE PER SECTION |
-10.00/+10.00 PERCENT SINGLE SECTION |
| CQWM |
NONDERATED CONTINUOUS VOLTAGE RATING AND TYPE PER SECTION |
20.0 DC SINGLE SECTION |
| ABJT |
TERMINAL LENGTH |
0.020 INCHES MINIMUM AND 0.040 INCHES MAXIMUM |
| ADAQ |
BODY LENGTH |
0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AAQL |
BODY STYLE |
CHIP TYPE |
| ABHP |
OVERALL LENGTH |
0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| ABKW |
OVERALL HEIGHT |
0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM |
| CWJK |
CASE MATERIAL |
CERAMIC |
| AEBZ |
SCHEMATIC DIAGRAM DESIGNATOR |
NO COMMON OR GROUNDED ELECTRODE(S) |
| CQJJ |
NONDERATED OPERATING TEMP |
-55.0 DEG CELSIUS MINIMUM AND 85.0 DEG CELSIUS MAXIMUM |
| AECQ |
ELECTRICAL POLARIZATION |
POLARIZED |
| AARH |
RELIABILITY FAILURE RATE LEVEL IN PERCENT |
1.000 |
| CWNJ |
CAPACITIVE ELECTRODE MATERIAL |
TANTALUM |
| ADAT |
BODY WIDTH |
0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM |
| ABMK |
OVERALL WIDTH |
0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |