| CWPM |
DISSIPATION FACTOR AT REFERENCE TEMP IN PERCENT |
6.000 |
| CQWM |
NONDERATED CONTINUOUS VOLTAGE RATING AND TYPE PER SECTION |
15.0 DC SINGLE SECTION |
| CQBQ |
CAPACITANCE VALUE PER SECTION |
4.700 MICROFARADS SINGLE SECTION |
| CWQH |
DC LEAKAGE AT REFERENCE TEMP |
1.000 MICROAMPERES |
| TEST |
TEST DATA DOCUMENT |
81349-MIL-C-55365 SPECIFICATION |
| ADAT |
BODY WIDTH |
0.094 INCHES MINIMUM AND 0.114 INCHES MAXIMUM |
| CQLH |
DC LEAKAGE AT MAXIMUM OPERATING TEMP |
10.0 MICROAMPERES |
| FEAT |
SPECIAL FEATURES |
WEIBULL GRADED FAILURE RATE |
| AARG |
RELIABILITY INDICATOR |
ESTABLISHED |
| ADAU |
BODY HEIGHT |
0.041 INCHES MINIMUM AND 0.061 INCHES MAXIMUM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
2 BONDING PAD |
| AECE |
ANODE TYPE |
SOLID |
| CRTP |
TOLERANCE RANGE PER SECTION |
-10.00/+10.00 PERCENT SINGLE SECTION |
| AARH |
RELIABILITY FAILURE RATE LEVEL IN PERCENT |
0.010 |
| AAQL |
BODY STYLE |
CHIP TYPE |
| CWJK |
CASE MATERIAL |
CERAMIC |
| AGAV |
END ITEM IDENTIFICATION |
6625-01-348-4550GENERATOR,SIGNAL |
| ZZZK |
SPECIFICATION/STANDARD DATA |
81349-MIL-C-55365/7 GOVERNMENT SPECIFICATION |
| AEBZ |
SCHEMATIC DIAGRAM DESIGNATOR |
NO COMMON OR GROUNDED ELECTRODE(S) |
| CQJJ |
NONDERATED OPERATING TEMP |
-55.0 DEG CELSIUS MINIMUM AND 85.0 DEG CELSIUS MAXIMUM |
| CWQC |
EQUIVALENT SERIES RESISTANCE AT REFERENCE TEMP IN OHMS |
2.00 |
| AECQ |
ELECTRICAL POLARIZATION |
POLARIZED |
| ADAQ |
BODY LENGTH |
0.133 INCHES MINIMUM AND 0.143 INCHES MAXIMUM |
| CRTL |
CRITICALITY CODE JUSTIFICATION |
FEAT |
| CWNJ |
CAPACITIVE ELECTRODE MATERIAL |
TANTALUM |
| ABJT |
TERMINAL LENGTH |
0.010 INCHES MINIMUM AND 0.030 INCHES MAXIMUM |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |