| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
175.0 DEG CELSIUS AMBIENT AIR |
| PRMT |
PRECIOUS MATERIAL |
SILVER |
| ABBH |
INCLOSURE MATERIAL |
GLASS AND METAL |
| AXGY |
MOUNTING METHOD |
TERMINAL |
| FEAT |
SPECIAL FEATURES |
ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| ABJT |
TERMINAL LENGTH |
0.750 INCHES MINIMUM |
| ADAV |
OVERALL DIAMETER |
0.085 INCHES MAXIMUM |
| PMLC |
PRECIOUS MATERIAL AND LOCATION |
LEADS SILVER |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
65.00 MILLIAMPERES SOURCE CUTOFF CURRENT HORSEPOWER METRIC 1ST SEMICONDUCTOR DEVICE DIODE |
| ABHP |
OVERALL LENGTH |
0.422 INCHES NOMINAL |
| CTQS |
VOLTAGE TOLERANCE IN PERCENT |
-2.4/+2.4 1ST SEMICONDUCTOR DEVICE DIODE |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
100.0 MAXIMUM REVERSE VOLTAGE, PEAK 2ND SEMICONDUCTOR DEVICE DIODE |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED CASE |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
750.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE 2ND SEMICONDUCTOR DEVICE DIODE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
2 UNINSULATED WIRE LEAD |
| ASKA |
COMPONENT NAME AND QUANTITY |
2 SEMICONDUCTOR DEVICE DIODE |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
12.0 NOMINAL NOMINAL REGULATOR VOLTAGE 1ST SEMICONDUCTOR DEVICE DIODE |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| TEST |
TEST DATA DOCUMENT |
26512-GS810FU DRAWING |