| CTQX |
CURRENT RATING PER CHARACTERISTIC |
100.00 MILLIAMPERES FORWARD CURRENT, AVERAGE PRESET ALL SEMICONDUCTOR DEVICE DIODE AND 50.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE AND 1.00 MILLIAMPERES FORWARD CURRENT, AVERAGE PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
40.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| ADAV |
OVERALL DIAMETER |
0.188 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP |
OVERALL LENGTH |
0.155 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ALAS |
INTERNAL CONFIGURATION |
JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ABBH |
INCLOSURE MATERIAL |
METAL ALL SEMICONDUCTOR DEVICE DIODE |
| CTRD |
POWER RATING PER CHARACTERISTIC |
100.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
| ABJT |
TERMINAL LENGTH |
1.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED CASE |
| ASCQ |
INTERNAL JUNCTION CONFIGURATION |
PN ALL SEMICONDUCTOR DEVICE DIODE |
| ASKA |
COMPONENT NAME AND QUANTITY |
2 SEMICONDUCTOR DEVICE DIODE |
| ASDD |
COMPONENT FUNCTION RELATIONSHIP |
MATCHED |
| TTQY |
TERMINAL TYPE AND QUANTITY |
2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
200.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| AXGY |
MOUNTING METHOD |
TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |