| CTQX |
CURRENT RATING PER CHARACTERISTIC |
54.00 MILLIAMPERES FORWARD CURRENT, AVERAGE OUTSIDE DIAMETER ALL SEMICONDUCTOR DEVICE DIODE |
| CTQS |
VOLTAGE TOLERANCE IN PERCENT |
-5.0/+5.0 ALL SEMICONDUCTOR DEVICE DIODE |
| ALAS |
INTERNAL CONFIGURATION |
JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| AFZC |
FUNCTION FOR WHICH DESIGNED |
VOLTAGE REGULATOR |
| FEAT |
SPECIAL FEATURES |
IF ONE OF THE MATCHED PAIR REQUIRES REPLACEMENT,BOTH MUST BE REPLACED |
| ABHP |
OVERALL LENGTH |
0.230 INCHES MINIMUM ALL TRANSISTOR AND 0.300 INCHES MAXIMUM ALL TRANSISTOR |
| ADAV |
OVERALL DIAMETER |
0.085 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.130 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED CASE |
| ASCQ |
INTERNAL JUNCTION CONFIGURATION |
PN ALL SEMICONDUCTOR DEVICE DIODE |
| ABBH |
INCLOSURE MATERIAL |
GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| CTRD |
POWER RATING PER CHARACTERISTIC |
400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| ASKA |
COMPONENT NAME AND QUANTITY |
2 SEMICONDUCTOR DEVICE DIODE |
| ASDD |
COMPONENT FUNCTION RELATIONSHIP |
MATCHED |
| ABJT |
TERMINAL LENGTH |
1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 1.500 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
200.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
68.0 NOMINAL REVERSE BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| AXGY |
MOUNTING METHOD |
TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |