| CTRD |
POWER RATING PER CHARACTERISTIC |
500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
150.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE |
| ADAV |
OVERALL DIAMETER |
0.096 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| ALAS |
INTERNAL CONFIGURATION |
JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ASKA |
COMPONENT NAME AND QUANTITY |
10 SEMICONDUCTOR DEVICE DIODE |
| ABJT |
TERMINAL LENGTH |
1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ASCQ |
INTERNAL JUNCTION CONFIGURATION |
PN ALL SEMICONDUCTOR DEVICE DIODE |
| ABBH |
INCLOSURE MATERIAL |
GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
50.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD |
COMPONENT FUNCTION RELATIONSHIP |
MATCHED |
| ABHP |
OVERALL LENGTH |
0.265 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
200.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE AND 450.00 MILLIAMPERES SOURCE CUTOFF CURRENT OUTSIDE DIAMETER ALL SEMICONDUCTOR DEVICE DIODE AND 15.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS MEGAHERTZ ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| ALAZ |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION |
DO-7 ALL SEMICONDUCTOR DEVICE DIODE |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| AXGY |
MOUNTING METHOD |
TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |