| CTQX |
CURRENT RATING PER CHARACTERISTIC |
50.00 NANOAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT PRESET |
| AXGY |
MOUNTING METHOD |
TERMINAL |
| ABHP |
OVERALL LENGTH |
0.700 MILLIMETERS MAXIMUM |
| FEAT |
SPECIAL FEATURES |
HIGH FREQUENCY LOW POWER SILICON NPN BJT; JUNCTION PATTERN ARRANGEMENT: NPN |
| AYQS |
TERMINAL CIRCLE DIAMETER |
0.209 MILLIMETERS MAXIMUM |
| AKPV |
MOUNTING FACILITY QUANTITY |
3 |
| ABJT |
TERMINAL LENGTH |
0.200 MILLIMETERS MAXIMUM |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
-55.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE |
| ABBH |
INCLOSURE MATERIAL |
GLASS |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED CASE |
| CTRD |
POWER RATING PER CHARACTERISTIC |
500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| TTQY |
TERMINAL TYPE AND QUANTITY |
3 UNINSULATED WIRE LEAD |