| AXGY |
MOUNTING METHOD |
TERMINAL |
| ADAV |
OVERALL DIAMETER |
0.370 INCHES NOMINAL |
| ALAS |
INTERNAL CONFIGURATION |
JUNCTION CONTACT |
| ABJT |
TERMINAL LENGTH |
0.260 MILLIMETERS MAXIMUM |
| AKPV |
MOUNTING FACILITY QUANTITY |
3 |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| FEAT |
SPECIAL FEATURES |
HIGH FREQUENCY LOW POWER SILICON PNP BJT; JUNCTION PATTERN ARRANGEMENT: PNP |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
150.00 MILLIAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT BLANK |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
-55.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE |
| ABHP |
OVERALL LENGTH |
0.510 MILLIMETERS MAXIMUM |
| ABBH |
INCLOSURE MATERIAL |
GLASS |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED CASE |
| CTRD |
POWER RATING PER CHARACTERISTIC |
800.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE |
| AYQS |
TERMINAL CIRCLE DIAMETER |
0.370 MILLIMETERS MAXIMUM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
3 UNINSULATED WIRE LEAD |