| ASDD |
COMPONENT FUNCTION RELATIONSHIP |
UNMATCHED |
| CTRD |
POWER RATING PER CHARACTERISTIC |
250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET 2ND SEMICONDUCTOR DEVICE DIODE |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
20.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE 3RD SEMICONDUCTOR DEVICE DIODE |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
150.00 MILLIAMPERES SOURCE CUTOFF CURRENT OUTSIDE DIAMETER 3RD SEMICONDUCTOR DEVICE DIODE |
| CTRD |
POWER RATING PER CHARACTERISTIC |
500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET 1ST SEMICONDUCTOR DEVICE DIODE |
| ADAV |
OVERALL DIAMETER |
0.096 INCHES NOMINAL 2ND SEMICONDUCTOR DEVICE DIODE |
| CTRD |
POWER RATING PER CHARACTERISTIC |
250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET 3RD SEMICONDUCTOR DEVICE DIODE |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
450.00 MILLIAMPERES SOURCE CUTOFF CURRENT OUTSIDE DIAMETER 1ST SEMICONDUCTOR DEVICE DIODE |
| ALAZ |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION |
DO-35 1ST SEMICONDUCTOR DEVICE DIODE |
| ADAV |
OVERALL DIAMETER |
0.096 INCHES NOMINAL 3RD SEMICONDUCTOR DEVICE DIODE |
| ALAS |
INTERNAL CONFIGURATION |
JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ABJT |
TERMINAL LENGTH |
1.000 INCHES MINIMUM 2ND SEMICONDUCTOR DEVICE DIODE |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
125.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE 1ST SEMICONDUCTOR DEVICE DIODE |
| ABJT |
TERMINAL LENGTH |
1.000 INCHES MINIMUM 3RD SEMICONDUCTOR DEVICE DIODE |
| ADAV |
OVERALL DIAMETER |
0.075 INCHES NOMINAL 1ST SEMICONDUCTOR DEVICE DIODE |
| ASKA |
COMPONENT NAME AND QUANTITY |
3 SEMICONDUCTOR DEVICE DIODE |
| ABHP |
OVERALL LENGTH |
0.160 INCHES NOMINAL 1ST SEMICONDUCTOR DEVICE DIODE |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED CASE |
| ASCQ |
INTERNAL JUNCTION CONFIGURATION |
PN ALL SEMICONDUCTOR DEVICE DIODE |
| ABBH |
INCLOSURE MATERIAL |
GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP |
OVERALL LENGTH |
0.265 INCHES NOMINAL 2ND SEMICONDUCTOR DEVICE DIODE |
| ALAZ |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION |
DO-7 2ND SEMICONDUCTOR DEVICE DIODE |
| ABJT |
TERMINAL LENGTH |
0.500 INCHES MINIMUM 1ST SEMICONDUCTOR DEVICE DIODE |
| ABHP |
OVERALL LENGTH |
0.265 INCHES NOMINAL 3RD SEMICONDUCTOR DEVICE DIODE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| ALAZ |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION |
DO-7 3RD SEMICONDUCTOR DEVICE DIODE |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
150.00 MILLIAMPERES SOURCE CUTOFF CURRENT OUTSIDE DIAMETER 2ND SEMICONDUCTOR DEVICE DIODE |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
20.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE 2ND SEMICONDUCTOR DEVICE DIODE |
| AXGY |
MOUNTING METHOD |
TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |