| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALLOY ALL SEMICONDUCTOR DEVICE DIODE |
| CTQS |
VOLTAGE TOLERANCE IN PERCENT |
-5.0/+5.0 ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
3.9 MAXIMUM NOMINAL REGULATOR VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP |
OVERALL LENGTH |
0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| FEAT |
SPECIAL FEATURES |
MATCHED W/IN 50 MILLIVOLTS VOLTAGE DROP IN EITHER DIRECTION. |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED CASE |
| AFZC |
FUNCTION FOR WHICH DESIGNED |
ZENER DIODE |
| ABBH |
INCLOSURE MATERIAL |
GLASS ALL SEMICONDUCTOR DEVICE DIODE AND METAL ALL SEMICONDUCTOR DEVICE DIODE |
| ADAV |
OVERALL DIAMETER |
0.125 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ASKA |
COMPONENT NAME AND QUANTITY |
2 SEMICONDUCTOR DEVICE DIODE |
| ASDD |
COMPONENT FUNCTION RELATIONSHIP |
MATCHED |
| ABJT |
TERMINAL LENGTH |
1.250 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
200.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| AXGY |
MOUNTING METHOD |
TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |