| ABKW |
OVERALL HEIGHT |
0.165 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.200 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ASKA |
COMPONENT NAME AND QUANTITY |
4 SEMICONDUCTOR DEVICE DIODE |
| ALAS |
INTERNAL CONFIGURATION |
JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ABMK |
OVERALL WIDTH |
0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP |
OVERALL LENGTH |
0.425 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.465 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| ASCQ |
INTERNAL JUNCTION CONFIGURATION |
PN ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
50.0 NOMINAL WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE ALL SEMICONDUCTOR DEVICE DIODE |
| FEAT |
SPECIAL FEATURES |
C/O 2 PAIR MATCHED W/IN 20 MILLIAMPS FWD CURRENT,EA PAIR IN PKG AS DESCRIBED. |
| ABJT |
TERMINAL LENGTH |
0.900 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD |
COMPONENT FUNCTION RELATIONSHIP |
MATCHED |
| TTQY |
TERMINAL TYPE AND QUANTITY |
2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
500.00 MILLIAMPERES COLLECTOR CURRENT, DC PRESET ALL SEMICONDUCTOR DEVICE DIODE AND 225.00 MILLIAMPERES ALL PRIMARIES PRESET ALL SEMICONDUCTOR DEVICE DIODE AND 75.00 MILLIAMPERES DRAIN CURRENT MEGAHERTZ ALL SEMICONDUCTOR DEVICE DIODE AND 2.00 AMPERES FORWARD CURRENT, DC NANOAMPERES ALL SEMICONDUCTOR DEVICE DIODE |
| ABBH |
INCLOSURE MATERIAL |
PLASTIC ALL SEMICONDUCTOR DEVICE DIODE |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| AXGY |
MOUNTING METHOD |
TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |