| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
175.0 DEG CELSIUS AMBIENT AIR |
| TTQY |
TERMINAL TYPE AND QUANTITY |
4 UNINSULATED WIRE LEAD |
| AXGY |
MOUNTING METHOD |
TERMINAL |
| CTRD |
POWER RATING PER CHARACTERISTIC |
250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
75.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP |
OVERALL LENGTH |
0.450 INCHES MAXIMUM |
| ALAS |
INTERNAL CONFIGURATION |
JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ABMK |
OVERALL WIDTH |
0.300 INCHES MAXIMUM |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
75.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| ABKW |
OVERALL HEIGHT |
0.200 INCHES MAXIMUM |
| ABBH |
INCLOSURE MATERIAL |
GLASS |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED CASE |
| ASCQ |
INTERNAL JUNCTION CONFIGURATION |
PN ALL SEMICONDUCTOR DEVICE DIODE |
| ABJT |
TERMINAL LENGTH |
0.900 INCHES MINIMUM |
| ASKA |
COMPONENT NAME AND QUANTITY |
2 SEMICONDUCTOR DEVICE DIODE |
| ASDD |
COMPONENT FUNCTION RELATIONSHIP |
MATCHED |
| ALBA |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE |
COLLECTOR |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL SEMICONDUCTOR DEVICE DIODE |