| FEAT |
SPECIAL FEATURES |
CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES |
| CTRD |
POWER RATING PER CHARACTERISTIC |
270.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL TRANSISTOR |
| ABMK |
OVERALL WIDTH |
0.850 INCHES MAXIMUM ALL TRANSISTOR |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL TRANSISTOR |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR AND 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER ALL TRANSISTOR AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR |
| ASCQ |
INTERNAL JUNCTION CONFIGURATION |
NPN ALL TRANSISTOR |
| ABKW |
OVERALL HEIGHT |
0.300 INCHES MAXIMUM ALL TRANSISTOR |
| ABHP |
OVERALL LENGTH |
0.980 INCHES MAXIMUM ALL TRANSISTOR |
| ASKA |
COMPONENT NAME AND QUANTITY |
4 TRANSISTOR |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
3.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM ALL TRANSISTOR AND 20.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM ALL TRANSISTOR |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
| TEST |
TEST DATA DOCUMENT |
13499-352-1108 DRAWING |
| ALAS |
INTERNAL CONFIGURATION |
JUNCTION CONTACT ALL TRANSISTOR |
| TTQY |
TERMINAL TYPE AND QUANTITY |
6 RIBBON ALL TRANSISTOR |
| ABBH |
INCLOSURE MATERIAL |
CERAMIC ALL TRANSISTOR |
| ASDD |
COMPONENT FUNCTION RELATIONSHIP |
MATCHED |
| BBJD |
FIELD FORCE EFFECT TYPE |
ELECTROSTATIC CHARGE |
| AKPV |
MOUNTING FACILITY QUANTITY |
2 ALL TRANSISTOR |
| AXGY |
MOUNTING METHOD |
UNTHREADED HOLE ALL TRANSISTOR |