| FEAT |
SPECIAL FEATURES |
ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: NPN |
| AXGY |
MOUNTING METHOD |
TERMINAL |
| ABHP |
OVERALL LENGTH |
0.785 INCHES MAXIMUM |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
200.0 DEG CELSIUS JUNCTION |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| ASKA |
COMPONENT NAME AND QUANTITY |
4 SEMICONDUCTOR DEVICE DIODE |
| CTRK |
TRANSFER RATIO |
60.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL SEMICONDUCTOR DEVICE DIODE |
| ABBH |
INCLOSURE MATERIAL |
CERAMIC |
| ABMK |
OVERALL WIDTH |
0.015 INCHES MAXIMUM |
| ABJT |
TERMINAL LENGTH |
0.100 INCHES MINIMUM |
| ASCK |
RESPONSE TIME |
35.0 NANOSECONDS MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ABKW |
OVERALL HEIGHT |
0.200 INCHES MAXIMUM |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED CASE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
14 PIN |
| CTRG |
CAPACITANCE RATING IN PICOFARADS |
10.0 MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| CTRD |
POWER RATING PER CHARACTERISTIC |
0.75 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
1.50 AMPERES SOURCE CUTOFF CURRENT MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL SEMICONDUCTOR DEVICE DIODE |