| CTQX |
CURRENT RATING PER CHARACTERISTIC |
17.00 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC ALL SEMICONDUCTOR DEVICE DIODE |
| CTQS |
VOLTAGE TOLERANCE IN PERCENT |
-10.0/+10.0 ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
175.0 DEG CELSIUS AMBIENT AIR |
| AFZC |
FUNCTION FOR WHICH DESIGNED |
BIDIRECTIONAL AND ZENER DIODE |
| AXGY |
MOUNTING METHOD |
TERMINAL |
| FEAT |
SPECIAL FEATURES |
ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| ADAV |
OVERALL DIAMETER |
0.085 INCHES MAXIMUM |
| CTRD |
POWER RATING PER CHARACTERISTIC |
3.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP |
OVERALL LENGTH |
0.450 INCHES MAXIMUM |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
15.0 NOMINAL NOMINAL REGULATOR VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE |
| ABBH |
INCLOSURE MATERIAL |
GLASS |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED CASE |
| ABJT |
TERMINAL LENGTH |
0.700 INCHES MINIMUM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
2 UNINSULATED WIRE LEAD |
| ASKA |
COMPONENT NAME AND QUANTITY |
2 SEMICONDUCTOR DEVICE DIODE |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL SEMICONDUCTOR DEVICE DIODE |