| PMLC |
PRECIOUS MATERIAL AND LOCATION |
CONTACT SURFACES PLATED GOLD |
| CTRD |
POWER RATING PER CHARACTERISTIC |
110.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP |
OVERALL LENGTH |
0.190 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.210 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
2.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
125.0 DEG CELSIUS AMBIENT AIR |
| ADAV |
OVERALL DIAMETER |
0.078 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.084 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ABBH |
INCLOSURE MATERIAL |
CERAMIC ALL SEMICONDUCTOR DEVICE DIODE |
| TEST |
TEST DATA DOCUMENT |
96214-775085 DRAWING |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
40.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| AXGY |
MOUNTING METHOD |
COMPRESSION ALL SEMICONDUCTOR DEVICE DIODE |
| ASKA |
COMPONENT NAME AND QUANTITY |
2 SEMICONDUCTOR DEVICE DIODE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
2 FERRULE ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD |
COMPONENT FUNCTION RELATIONSHIP |
MATCHED |
| BBJD |
FIELD FORCE EFFECT TYPE |
ELECTROSTATIC CHARGE |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL SEMICONDUCTOR DEVICE DIODE |