| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
0.3 MAXIMUM FORWARD VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| ABMK |
OVERALL WIDTH |
0.104 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
100.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
4 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| ABKW |
OVERALL HEIGHT |
0.040 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP |
OVERALL LENGTH |
0.114 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
150.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE |
| ALAS |
INTERNAL CONFIGURATION |
JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ASKA |
COMPONENT NAME AND QUANTITY |
8 SEMICONDUCTOR DEVICE DIODE |
| ABBH |
INCLOSURE MATERIAL |
METAL ALL SEMICONDUCTOR DEVICE DIODE |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED CASE |
| ASCQ |
INTERNAL JUNCTION CONFIGURATION |
PN ALL SEMICONDUCTOR DEVICE DIODE |
| AXGY |
MOUNTING METHOD |
PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE |
| CTRD |
POWER RATING PER CHARACTERISTIC |
100.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD |
COMPONENT FUNCTION RELATIONSHIP |
MATCHED |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL SEMICONDUCTOR DEVICE DIODE |