| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
8.8 MAXIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
175.0 DEG CELSIUS AMBIENT AIR |
| ABBH |
INCLOSURE MATERIAL |
GLASS AND METAL |
| AXGY |
MOUNTING METHOD |
TERMINAL |
| FEAT |
SPECIAL FEATURES |
ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| CTRG |
CAPACITANCE RATING IN PICOFARADS |
100.0 MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP |
OVERALL LENGTH |
0.320 INCHES MAXIMUM |
| ABJT |
TERMINAL LENGTH |
1.255 INCHES MAXIMUM |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED CASE |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
10.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS NANOAMPERES ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
2 UNINSULATED WIRE LEAD |
| ALAZ |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION |
DO-13 |
| ASKA |
COMPONENT NAME AND QUANTITY |
2 SEMICONDUCTOR DEVICE DIODE |
| CTRD |
POWER RATING PER CHARACTERISTIC |
1500.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MAJOR ALL SEMICONDUCTOR DEVICE DIODE |
| ALBA |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE |
COLLECTOR |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| ADAV |
OVERALL DIAMETER |
0.225 INCHES MAXIMUM |