| ABJT |
TERMINAL LENGTH |
1.625 INCHES MAXIMUM |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
175.0 DEG CELSIUS AMBIENT AIR |
| AXGY |
MOUNTING METHOD |
TERMINAL |
| FEAT |
SPECIAL FEATURES |
ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| ADAV |
OVERALL DIAMETER |
0.235 INCHES MAXIMUM |
| CTRD |
POWER RATING PER CHARACTERISTIC |
1500.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER MINOR ALL SEMICONDUCTOR DEVICE DIODE |
| ABBH |
INCLOSURE MATERIAL |
GLASS |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED CASE |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
14.7 MAXIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
2 UNINSULATED WIRE LEAD |
| ALAZ |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION |
DO-13 |
| ASKA |
COMPONENT NAME AND QUANTITY |
2 SEMICONDUCTOR DEVICE DIODE |
| ABHP |
OVERALL LENGTH |
0.357 INCHES MAXIMUM |
| AFZC |
FUNCTION FOR WHICH DESIGNED |
RECTIFIER AND TRANSIENT SUPPRESSOR |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
1.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS NANOAMPERES ALL SEMICONDUCTOR DEVICE DIODE |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL SEMICONDUCTOR DEVICE DIODE |