| ALAZ |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION |
TO-218 |
| ABHP |
OVERALL LENGTH |
1.200 INCHES NOMINAL |
| ABJT |
TERMINAL LENGTH |
0.470 INCHES MINIMUM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
3 PIN |
| FEAT |
SPECIAL FEATURES |
JUNCTION PATTERN ARRANGEMENT: NPN |
| ALAS |
INTERNAL CONFIGURATION |
JUNCTION CONTACT |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
1.00 MILLIAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT MINOR AND 2.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM AND 6.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 10.00 MILLIAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT MAJOR |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON |
| CTRD |
POWER RATING PER CHARACTERISTIC |
113.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| CTRK |
TRANSFER RATIO |
30.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| AXGY |
MOUNTING METHOD |
TERMINAL AND UNTHREADED HOLE |
| ABKW |
OVERALL HEIGHT |
0.182 INCHES NOMINAL |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
3.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE AND 400.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 10.0 NOMINAL EMITTER TO BASE VOLTAGE, DC AND 400.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 900.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 1.4 MAXIMUM BASE TO EMITTER SATURATION VOLTAGE |
| ABMK |
OVERALL WIDTH |
0.551 INCHES MINIMUM AND 0.570 INCHES MAXIMUM |
| AKPV |
MOUNTING FACILITY QUANTITY |
1 |