| CTQX |
CURRENT RATING PER CHARACTERISTIC |
60.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE 2ND SEMICONDUCTOR DEVICE DIODE |
| AFZC |
FUNCTION FOR WHICH DESIGNED |
SWITCHING |
| CTRD |
POWER RATING PER CHARACTERISTIC |
41.5 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET 1ST SEMICONDUCTOR DEVICE THYRISTOR |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
480.0 MAXIMUM NOMINAL REGULATOR VOLTAGE 1ST SEMICONDUCTOR DEVICE THYRISTOR |
| ABMK |
OVERALL WIDTH |
27.000 INCHES NOMINAL |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON 1ST SEMICONDUCTOR DEVICE THYRISTOR |
| CTRD |
POWER RATING PER CHARACTERISTIC |
41.5 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET 2ND SEMICONDUCTOR DEVICE DIODE |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
480.0 MAXIMUM NOMINAL REGULATOR VOLTAGE 2ND SEMICONDUCTOR DEVICE DIODE |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON 2ND SEMICONDUCTOR DEVICE DIODE |
| AXGY |
MOUNTING METHOD |
PRESS FIT |
| ASKA |
COMPONENT NAME AND QUANTITY |
3 SEMICONDUCTOR DEVICE DIODE AND 3 SEMICONDUCTOR DEVICE THYRISTOR |
| TTQY |
TERMINAL TYPE AND QUANTITY |
6 UNINSULATED WIRE LEAD |
| ABHP |
OVERALL LENGTH |
27.000 INCHES NOMINAL |
| ABKW |
OVERALL HEIGHT |
21.000 INCHES NOMINAL |
| ABBH |
INCLOSURE MATERIAL |
CERAMIC AND METAL |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
60.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE 1ST SEMICONDUCTOR DEVICE THYRISTOR |