| AFZC |
FUNCTION FOR WHICH DESIGNED |
SWITCHING |
| ADAV |
OVERALL DIAMETER |
0.056 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.075 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| AGAV |
END ITEM IDENTIFICATION |
5841-01-236-8951 DETECTING SET R AN/APR-39A(V)1 |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
225.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE AND 75.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |
| ALAS |
INTERNAL CONFIGURATION |
JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ALAZ |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION |
DO-35 ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| ASCQ |
INTERNAL JUNCTION CONFIGURATION |
PN ALL SEMICONDUCTOR DEVICE DIODE |
| ABBH |
INCLOSURE MATERIAL |
GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP |
OVERALL LENGTH |
0.140 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.180 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ASKA |
COMPONENT NAME AND QUANTITY |
2 SEMICONDUCTOR DEVICE DIODE |
| ASDD |
COMPONENT FUNCTION RELATIONSHIP |
MATCHED |
| ABJT |
TERMINAL LENGTH |
1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 1.500 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| BBJD |
FIELD FORCE EFFECT TYPE |
ELECTROSTATIC CHARGE |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| AXGY |
MOUNTING METHOD |
TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |