5961-01-358-7365 ( FJT2019 , 190007P2 , MT5248 , C3198-2 )

NSN Information
NSN FSC NIIN Item Name INC
5961-01-358-7365 5961 013587365 SEMICONDUCTOR DEVICE,DIODE 2058
NSN Features
MRC Parameter Characteristics
CTRD POWER RATING PER CHARACTERISTIC 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE
CTQX CURRENT RATING PER CHARACTERISTIC 75.00 MILLIAMPERES COLLECTOR CURRENT, DC ABSOLUTE AND 50.00 MILLIAMPERES ALL PRIMARIES PRESET
AXGY MOUNTING METHOD TERMINAL
CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS JUNCTION
ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM
CTMZ SEMICONDUCTOR MATERIAL SILICON
ABHP OVERALL LENGTH 0.300 INCHES MAXIMUM
ABBH INCLOSURE MATERIAL GLASS
ADAV OVERALL DIAMETER 0.105 INCHES MAXIMUM
TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
CBBL FEATURES PROVIDED ELECTROSTATIC SENSITIVE
CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MINIMUM BREAKDOWN VOLTAGE, DC
Manufacturing Part Numbers (SKUs)
Part SKU Cage Status RNVC RNCC SADC DAC RNAAC
FJT2019 27014 A 9 5 5 TX
190007P2 94117 A 2 3 A TX
MT5248 14552 A 2 5 5 TX
C3198-2 16352 A 9 5 5 TX
Manufacturers
Part SKU Cage Manufacturer Type Status
FJT2019 27014 NATIONAL SEMICONDUCTOR CORPORATI A A
190007P2 94117 BAE SYSTEMS INFORMATION AND A A
MT5248 14552 MICROSEMI CORPORATION A A
C3198-2 16352 C O D I CORP A A
FLIS Identification
PMIC ADPE Code CRITL Code DEMIL Code DEMIL INTG NIIN Asgt ESD HMIC ENAC Schedule-B INC
A X A 1 05/19/1 B N 8541100070 2058
FLIS Management
MOE REC Rep Code Mgmt Ctl USC Phrase Code Phrase Statement
DS I
DN 9B----- N
Demilitarization Codes & Management
DML PMI HMIC ADP CC ESDC
A A N X B
Miscellaneous Management
MOE (S_A) SOS AAC QUP UI SLC CIIC RC MCC SVC
DN SMS Z 0 EA 0 U 9B----- N
DS SMS Z 0 EA 0 U D
Management Control Army
MATCAT 1 MATCAT 2 MATCAT 3 MATCAT 4 5 ARC
Freight
NMFC NMFC SUB UFC HMC LTL LCL WCC TCC SHC ADC ACC ASH NMF DESC