5961-01-358-8559 ( V11326Q , 312637-001 )

NSN Information
NSN FSC NIIN Item Name INC
5961-01-358-8559 5961 013588559 SEMICONDUCTOR DEVICES,UNITIZED 6196
NSN Features
MRC Parameter Characteristics
AXGY MOUNTING METHOD TERMINAL
ABHP OVERALL LENGTH 0.785 INCHES MAXIMUM
CTMZ SEMICONDUCTOR MATERIAL SILICON ALL TRANSISTOR
CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS JUNCTION
CBBL FEATURES PROVIDED ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
ABBH INCLOSURE MATERIAL CERAMIC
ASKA COMPONENT NAME AND QUANTITY 4 TRANSISTOR
CTQX CURRENT RATING PER CHARACTERISTIC 0.85 AMPERES NOMINAL DRAIN CURRENT ALL TRANSISTOR
CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
ABKW OVERALL HEIGHT 0.200 INCHES MAXIMUM
ABMK OVERALL WIDTH 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
TTQY TERMINAL TYPE AND QUANTITY 14 PIN
CTRD POWER RATING PER CHARACTERISTIC 1.3 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR
Manufacturing Part Numbers (SKUs)
Part SKU Cage Status RNVC RNCC SADC DAC RNAAC
V11326Q 17856 A 2 3 5 TX
312637-001 81413 A 2 7 A TX
Manufacturers
Part SKU Cage Manufacturer Type Status
V11326Q 17856 SILICONIX INCORPORATED A A
312637-001 81413 BAE SYSTEMS INFORMATION AND A A
FLIS Identification
PMIC ADPE Code CRITL Code DEMIL Code DEMIL INTG NIIN Asgt ESD HMIC ENAC Schedule-B INC
A X A 05/22/1 B N 8541500080 6196
FLIS Management
MOE REC Rep Code Mgmt Ctl USC Phrase Code Phrase Statement
DS N I
DF N SF9EH-N F
Demilitarization Codes & Management
DML PMI HMIC ADP CC ESDC
A A N X B
Miscellaneous Management
MOE (S_A) SOS AAC QUP UI SLC CIIC RC MCC SVC
DS SMS Z 0 EA 0 U D
DF SMS Z 0 EA 0 U SF9EH-N F
Management Control Army
MATCAT 1 MATCAT 2 MATCAT 3 MATCAT 4 5 ARC
Freight
NMFC NMFC SUB UFC HMC LTL LCL WCC TCC SHC ADC ACC ASH NMF DESC
063025 Z 34525 W 72D 3 9 A H Z SEMICONDUCTORS/DEVICES NOI ETC