| TTQY |
TERMINAL TYPE AND QUANTITY |
5 UNINSULATED WIRE LEAD |
| ABBH |
INCLOSURE MATERIAL |
METAL |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
1.5 NOMINAL FORWARD VOLTAGE, DC SINGLE SEMICONDUCTOR DEVICE DIODE |
| ABMK |
OVERALL WIDTH |
0.690 INCHES NOMINAL |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
4.50 AMPERES NOMINAL DRAIN CURRENT SINGLE TRANSISTOR |
| CBBL |
FEATURES PROVIDED |
ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
4.50 AMPERES NOMINAL FORWARD CURRENT, DC SINGLE SEMICONDUCTOR DEVICE DIODE |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
80.0 DEG CELSIUS AMBIENT AIR |
| FEAT |
SPECIAL FEATURES |
SINGLE SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON SINGLE SEMICONDUCTOR DEVICE DIODE |
| ABKW |
OVERALL HEIGHT |
0.275 INCHES MAXIMUM |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON SINGLE TRANSISTOR |
| ABHP |
OVERALL LENGTH |
0.820 INCHES NOMINAL |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
500.0 NOMINAL DRAIN TO SOURCE VOLTAGE SINGLE TRANSISTOR |
| AKPV |
MOUNTING FACILITY QUANTITY |
1 |
| ASKA |
COMPONENT NAME AND QUANTITY |
1 SEMICONDUCTOR DEVICE DIODE AND 1 TRANSISTOR |
| AXGY |
MOUNTING METHOD |
UNTHREADED HOLE |