| PRMT |
PRECIOUS MATERIAL |
GOLD |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
3 PIN |
| PMLC |
PRECIOUS MATERIAL AND LOCATION |
TERMINAL AREAS IAW MIL-STD-2000 PARA. 5.4.17.2 GOLD |
| ABKW |
OVERALL HEIGHT |
0.560 INCHES MAXIMUM |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
175.0 DEG CELSIUS JUNCTION |
| ABBH |
INCLOSURE MATERIAL |
CERAMIC |
| ABHP |
OVERALL LENGTH |
0.990 INCHES MAXIMUM |
| ASCK |
RESPONSE TIME |
35.0 NANOSECONDS MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| TEST |
TEST DATA DOCUMENT |
35351-171280 DRAWING |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
40.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE AND 400.00 AMPERES FORWARD CURRENT, AVERAGE PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| AKPV |
MOUNTING FACILITY QUANTITY |
4 |
| AXGY |
MOUNTING METHOD |
TERMINAL AND UNTHREADED HOLE |
| ABMK |
OVERALL WIDTH |
0.545 INCHES MAXIMUM |
| ASKA |
COMPONENT NAME AND QUANTITY |
2 SEMICONDUCTOR DEVICE DIODE |
| ALAZ |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION |
TO-254AA |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL SEMICONDUCTOR |