| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
SILICON RF POWER, VDMOS TRANSISTOR |
| ABHP |
OVERALL LENGTH |
0.975 INCHES NOMINAL |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
70.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 70.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
2 TAB, SOLDER LUG |
| CTRD |
POWER RATING PER CHARACTERISTIC |
100.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| ABBH |
INCLOSURE MATERIAL |
METAL |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON |
| ABKW |
OVERALL HEIGHT |
0.200 INCHES MAXIMUM |
| AKPV |
MOUNTING FACILITY QUANTITY |
2 |
| CBBL |
FEATURES PROVIDED |
LOW NOISE |
| AXGY |
MOUNTING METHOD |
SLOT |
| ABMK |
OVERALL WIDTH |
0.670 INCHES NOMINAL |
| FEAT |
SPECIAL FEATURES |
8GOLD METALIZED; PACKAGE STYLE - AK; HIGH EFFICIENCY; LINEAR; HIGH GAIN; MAXIMUM JUNCTION TEMPERATURE PLUS 200.0 DEGREES C; STORAGE TEMPERATURE MINUS 65.0 TO PLUS 150.0 DEGREES C; DESIGNED SPECIFICALLY FOR BROADBAND RADIO FREQUENCY (RF) APPLICATIONS |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
4.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE |