| ABMK |
OVERALL WIDTH |
0.039 INCHES NOMINAL |
| ABHP |
OVERALL LENGTH |
1.130 INCHES NOMINAL |
| FEAT |
SPECIAL FEATURES |
TMOS V, POWER FIELD EFFECT TRANSISTOR; P-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| AGAV |
END ITEM IDENTIFICATION |
NSN 4935-01-136-0233; SHOP EQUIPMENT, GUIDED MISSILE SYSTEM; W/S; MISSILE, PATRIOT |
| AFZC |
FUNCTION FOR WHICH DESIGNED |
SWITCHING |
| AXGY |
MOUNTING METHOD |
TERMINAL |
| ALAZ |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION |
TO-220AB |
| ABBH |
INCLOSURE MATERIAL |
PLASTIC OR CERAMIC |
| CTRD |
POWER RATING PER CHARACTERISTIC |
75.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
175.0 DEG CELSIUS JUNCTION |
| ABKW |
OVERALL HEIGHT |
0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON |
| ALAS |
INTERNAL CONFIGURATION |
FIELD EFFECT |
| ABJT |
TERMINAL LENGTH |
0.500 INCHES MINIMUM |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
30.00 AMPERES ALL PRIMARIES MAXIMUM OF STANDARD RANGE |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
60.0 NOMINAL DRAIN TO SOURCE VOLTAGE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
3 UNINSULATED WIRE LEAD |