| AFZC |
FUNCTION FOR WHICH DESIGNED |
AMPLIFIER |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
1.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| ABHP |
OVERALL LENGTH |
0.173 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| ABMK |
OVERALL WIDTH |
0.146 INCHES MINIMUM AND 0.177 INCHES MAXIMUM |
| FEAT |
SPECIAL FEATURES |
SOT-89 CASE; MANUFACTURED BY THE EPITAXIAL PLANAR PROCESS, EPOXY MOLDED; DESIGNED FOR HIGH CURRENT GENERAL PURPOSE AMPLIFIER APPLICATIONS |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
150.0 DEG CELSIUS JUNCTION |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON |
| ABKW |
OVERALL HEIGHT |
0.055 INCHES MINIMUM AND 0.067 INCHES MAXIMUM |
| CTRD |
POWER RATING PER CHARACTERISTIC |
1.2 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
SURFACE MOUNT NPN SILICON TRANSISTOR |