| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| ADAU |
BODY HEIGHT |
0.750 INCHES MAXIMUM |
| ADAQ |
BODY LENGTH |
0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM |
| ADAT |
BODY WIDTH |
0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| CZEQ |
TIME RATING PER CHACTERISTIC |
50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
532.0 MILLIWATTS |
| TEST |
TEST DATA DOCUMENT |
53397-88315 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 PRINTED CIRCUIT |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CQZP |
INPUT CIRCUIT PATTERN |
6 INPUT |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| CBBL |
FEATURES PROVIDED |
PROGRAMMABLE AND MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND BIPOLAR AND W/ENABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND PROGRAMMED AND WIRE-OR OUTPUTS |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |