| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| TEST |
TEST DATA DOCUMENT |
81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL |
| CBBL |
FEATURES PROVIDED |
HIGH SPEED AND POSITIVE OUTPUTS AND MONOLITHIC AND HERMETICALLY SEALED AND W/TOTEM POLE OUTPUT |
| ADAQ |
BODY LENGTH |
0.796 INCHES MAXIMUM |
| PRMT |
PRECIOUS MATERIAL |
GOLD |
| ZZZK |
SPECIFICATION/STANDARD DATA |
81349-MIL-M-38510/23 GOVERNMENT SPECIFICATION |
| TTQY |
TERMINAL TYPE AND QUANTITY |
14 PRINTED CIRCUIT |
| CWSG |
TERMINAL SURFACE TREATMENT |
GOLD |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-1 MIL-M-38510 |
| CZEQ |
TIME RATING PER CHACTERISTIC |
2.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 2.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 16.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| PMLC |
PRECIOUS MATERIAL AND LOCATION |
TERMINALS GOLD |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| ADAU |
BODY HEIGHT |
0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
792.0 MILLIWATTS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CQZP |
INPUT CIRCUIT PATTERN |
QUAD 2 INPUT |
| ADAT |
BODY WIDTH |
0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
4 GATE, NAND |