| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CBBL |
FEATURES PROVIDED |
BURN IN, MIL-STD-883, CLASS B AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS |
| CQWX |
OUTPUT LOGIC FORM |
DIODE-TRANSISTOR LOGIC |
| TTQY |
TERMINAL TYPE AND QUANTITY |
14 PRINTED CIRCUIT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| ADAT |
BODY WIDTH |
0.230 INCHES MINIMUM AND 0.270 INCHES MAXIMUM |
| ADAQ |
BODY LENGTH |
0.685 INCHES MINIMUM AND 0.715 INCHES MAXIMUM |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CZEQ |
TIME RATING PER CHACTERISTIC |
25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CQZP |
INPUT CIRCUIT PATTERN |
QUAD 2 INPUT |
| ADAU |
BODY HEIGHT |
0.120 INCHES MAXIMUM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
8.0 VOLTS MAXIMUM POWER SOURCE |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
66.0 MILLIWATTS |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
4 GATE, NAND |