| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
1 DECODER, BINARY CODED DECIMAL TO SEVEN SEGMENT AND 1 DRIVER, LIGHT-EMITTING DIODE AND 1 DRIVER, LAMP, INCANDESCENT AND 1 DRIVER, NIXIE |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
237.0 MILLIWATTS |
| CQZP |
INPUT CIRCUIT PATTERN |
5 INPUT |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
-0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| ADAT |
BODY WIDTH |
0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ADAU |
BODY HEIGHT |
0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| ADAQ |
BODY LENGTH |
0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM |
| CZEQ |
TIME RATING PER CHACTERISTIC |
85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 PRINTED CIRCUIT |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CBBL |
FEATURES PROVIDED |
LOW POWER AND POSITIVE OUTPUTS AND MONOLITHIC AND HERMETICALLY SEALED AND W/OPEN COLLECTOR |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |