| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| ADAU |
BODY HEIGHT |
0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CZEQ |
TIME RATING PER CHACTERISTIC |
6.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CBBL |
FEATURES PROVIDED |
POSITIVE OUTPUTS AND HIGH SPEED AND MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE |
| TEST |
TEST DATA DOCUMENT |
97942-649A833 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL |
| ADAT |
BODY WIDTH |
0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CQZP |
INPUT CIRCUIT PATTERN |
QUAD 2 INPUT |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
650.0 MILLIWATTS |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
4 GATE, NAND |
| ADAQ |
BODY LENGTH |
0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |