| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| TEST |
TEST DATA DOCUMENT |
03640-6088479 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| CQSZ |
INCLOSURE CONFIGURATION |
FLAT PACK |
| TTQY |
TERMINAL TYPE AND QUANTITY |
14 FLAT LEADS |
| CBBL |
FEATURES PROVIDED |
MONOLITHIC AND W/OPEN COLLECTOR AND HERMETICALLY SEALED AND POSITIVE OUTPUTS |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
88.0 MILLIWATTS |
| ADAT |
BODY WIDTH |
0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ |
TIME RATING PER CHACTERISTIC |
15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| ADAQ |
BODY LENGTH |
0.350 INCHES NOMINAL |
| ADAU |
BODY HEIGHT |
0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
MO-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CQZP |
INPUT CIRCUIT PATTERN |
QUAD 2 INPUT |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
4 GATE, NAND |