| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| TEST |
TEST DATA DOCUMENT |
81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
15.5 VOLTS MAXIMUM POWER SOURCE AND -0.5 VOLTS MAXIMUM POWER SOURCE |
| ADAQ |
BODY LENGTH |
0.796 INCHES MAXIMUM |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
2 GATE, NOR |
| TTQY |
TERMINAL TYPE AND QUANTITY |
14 PRINTED CIRCUIT |
| CBBL |
FEATURES PROVIDED |
POSITIVE OUTPUTS AND MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-1 MIL-M-38510 |
| CZEQ |
TIME RATING PER CHACTERISTIC |
15.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 22.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 315.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 315.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| ADAU |
BODY HEIGHT |
0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
200.0 MILLIWATTS |
| CQZP |
INPUT CIRCUIT PATTERN |
DUAL 4 INPUT |
| ZZZK |
SPECIFICATION/STANDARD DATA |
81349-MIL-M-38510/52 GOVERNMENT SPECIFICATION |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| ADAT |
BODY WIDTH |
0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+175.0 DEG CELSIUS |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |