| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| TEST |
TEST DATA DOCUMENT |
81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
15.5 VOLTS MAXIMUM POWER SOURCE AND -0.5 VOLTS MAXIMUM POWER SOURCE |
| ADAQ |
BODY LENGTH |
0.796 INCHES MAXIMUM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
14 PRINTED CIRCUIT |
| CZEQ |
TIME RATING PER CHACTERISTIC |
15.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 375.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 490.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-1 MIL-M-38510 |
| ADAU |
BODY HEIGHT |
0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
200.0 MILLIWATTS |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
2 GATE, NAND |
| CQZP |
INPUT CIRCUIT PATTERN |
DUAL 4 INPUT |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| ADAT |
BODY WIDTH |
0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ZZZK |
SPECIFICATION/STANDARD DATA |
81349-MIL-M-38510/50 GOVERNMENT SPECIFICATION |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM SPEED |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+175.0 DEG CELSIUS |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |