| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CQZP |
INPUT CIRCUIT PATTERN |
11 INPUT |
| ADAT |
BODY WIDTH |
0.520 INCHES NOMINAL |
| ADAU |
BODY HEIGHT |
0.160 INCHES NOMINAL |
| CBBL |
FEATURES PROVIDED |
HIGH SPEED AND HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND NEGATIVE OUTPUTS AND W/DECODED OUTPUT |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| CQWX |
OUTPUT LOGIC FORM |
P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| TEST |
TEST DATA DOCUMENT |
94117-310132 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CRHL |
BIT QUANTITY (NON-CORE) |
1024 |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| ADAQ |
BODY LENGTH |
1.250 INCHES NOMINAL |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
0.3 VOLTS MAXIMUM POWER SOURCE |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CSWJ |
WORD QUANTITY (NON-CORE) |
256 |