| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CSWJ |
WORD QUANTITY (NON-CORE) |
64 |
| CZEQ |
TIME RATING PER CHACTERISTIC |
450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| ADAQ |
BODY LENGTH |
1.130 INCHES MINIMUM AND 1.260 INCHES MAXIMUM |
| CBBL |
FEATURES PROVIDED |
NEGATIVE OUTPUTS AND HERMETICALLY SEALED AND MONOLITHIC AND MULTICHIP AND W/BUFFERED OUTPUT |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| CQWX |
OUTPUT LOGIC FORM |
P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| AFJQ |
STORAGE TEMP RANGE |
-55.0/+150.0 DEG CELSIUS |
| CRHL |
BIT QUANTITY (NON-CORE) |
256 |
| ADAT |
BODY WIDTH |
0.475 INCHES MINIMUM AND 0.530 INCHES MAXIMUM |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| AFGA |
OPERATING TEMP RANGE |
+0.0/+75.0 DEG CELSIUS |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| CQZP |
INPUT CIRCUIT PATTERN |
18 INPUT |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| ADAU |
BODY HEIGHT |
0.140 INCHES MAXIMUM |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-20.0 VOLTS MINIMUM POWER SOURCE AND 0.3 VOLTS MAXIMUM POWER SOURCE |