5962-01-019-8650 ( DG175AA2 , 72-00291-115 )

NSN Information
NSN FSC NIIN Item Name INC
5962-01-019-8650 5962 010198650 MICROCIRCUIT,DIGITAL 3177
NSN Features
MRC Parameter Characteristics
AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS
ABKW OVERALL HEIGHT 0.665 INCHES MINIMUM
AEHX MAXIMUM POWER DISSIPATION RATING 450.0 MILLIWATTS
CQZP INPUT CIRCUIT PATTERN 1 CHANNEL
CQWX OUTPUT LOGIC FORM P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC AND TRANSISTOR-TRANSISTOR LOGIC
AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS
ADAU BODY HEIGHT 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CTFT CASE OUTLINE SOURCE AND DESIGNATOR TO-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
CBBL FEATURES PROVIDED BURN IN, MIL-STD-883, CLASS B AND HERMETICALLY SEALED AND COMPATIBLE DTL AND COMPATIBLE RTL AND MONOLITHIC
TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD
ADAR BODY OUTSIDE DIAMETER 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CQSJ INCLOSURE MATERIAL METAL
CQSZ INCLOSURE CONFIGURATION CAN
CSSL DESIGN FUNCTION AND QUANTITY 1 SWITCH, ANALOG, SINGLE POLE DOUBLE THROW AND 1 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR
Manufacturing Part Numbers (SKUs)
Part SKU Cage Status RNVC RNCC SADC DAC RNAAC
DG175AA2 17856 A 2 5 5 TX
72-00291-115 00724 A 2 3 1 TX
Manufacturers
Part SKU Cage Manufacturer Type Status
DG175AA2 17856 SILICONIX INCORPORATED A A
72-00291-115 00724 RAYTHEON COMPANY A A
FLIS Identification
PMIC ADPE Code CRITL Code DEMIL Code DEMIL INTG NIIN Asgt ESD HMIC ENAC Schedule-B INC
A 0 X Q 04/20/1 B N 8542900000 3177
FLIS Management
MOE REC Rep Code Mgmt Ctl USC Phrase Code Phrase Statement
DM Z 16E2--- M
DN 9N----- N V DISCONTINUED W/O REPLACEMENT
Demilitarization Codes & Management
DML PMI HMIC ADP CC ESDC
Q A N 0 X B
Miscellaneous Management
MOE (S_A) SOS AAC QUP UI SLC CIIC RC MCC SVC
DN S9E Y 1 EA 0 U 9N----- N
DM S9E Z 1 EA 0 U Z 16E2--- M
Management Control Army
MATCAT 1 MATCAT 2 MATCAT 3 MATCAT 4 5 ARC
Freight
NMFC NMFC SUB UFC HMC LTL LCL WCC TCC SHC ADC ACC ASH NMF DESC
061700 X 35325 J 72D 3 9 A H Z ELEC APPLIANCES/INSTRUMENTS NOI