| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| ABKW |
OVERALL HEIGHT |
0.330 INCHES NOMINAL |
| ADAT |
BODY WIDTH |
0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| ADAQ |
BODY LENGTH |
0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
14 PRINTED CIRCUIT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
10.0 MILLIWATTS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
7.0 VOLTS MAXIMUM POWER SOURCE |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CQZP |
INPUT CIRCUIT PATTERN |
QUAD 2 INPUT |
| ADAU |
BODY HEIGHT |
0.180 INCHES MAXIMUM |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
TO-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CZEQ |
TIME RATING PER CHACTERISTIC |
22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
4 GATE, NAND |