| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CZEQ |
TIME RATING PER CHACTERISTIC |
70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
625.0 MILLIWATTS |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| ADAU |
BODY HEIGHT |
0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
5.5 VOLTS MAXIMUM POWER SOURCE |
| TEST |
TEST DATA DOCUMENT |
36659-XN1306420 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 PRINTED CIRCUIT |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CBBL |
FEATURES PROVIDED |
W/ENABLE AND PROGRAMMABLE AND PROGRAMMED AND W/DECODED OUTPUT AND W/STORAGE AND W/OPEN COLLECTOR AND EXPANDABLE AND HIGH SPEED AND W/DISABLE AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CRHL |
BIT QUANTITY (NON-CORE) |
1024 |
| ADAT |
BODY WIDTH |
0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAQ |
BODY LENGTH |
0.896 INCHES MAXIMUM |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-2 MIL-M-38510 |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| CQZP |
INPUT CIRCUIT PATTERN |
10 INPUT |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CSWJ |
WORD QUANTITY (NON-CORE) |
256 |