| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CSWJ |
WORD QUANTITY (NON-CORE) |
64 |
| ADAU |
BODY HEIGHT |
0.120 INCHES MINIMUM AND 0.150 INCHES MAXIMUM |
| CRHL |
BIT QUANTITY (NON-CORE) |
512 |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
625.0 MILLIWATTS |
| TEST |
TEST DATA DOCUMENT |
36452-116598 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| ADAQ |
BODY LENGTH |
1.240 INCHES MINIMUM AND 1.280 INCHES MAXIMUM |
| CZEQ |
TIME RATING PER CHACTERISTIC |
75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
5.5 VOLTS MAXIMUM POWER SOURCE |
| ADAT |
BODY WIDTH |
0.510 INCHES MINIMUM AND 0.550 INCHES MAXIMUM |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CQZP |
INPUT CIRCUIT PATTERN |
8 INPUT |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CBBL |
FEATURES PROVIDED |
W/DECODED OUTPUT AND WIRE-OR OUTPUTS AND W/BUFFERED OUTPUT AND PROGRAMMED AND PROGRAMMABLE AND W/ENABLE AND POSITIVE OUTPUTS AND MONOLITHIC AND HERMETICALLY SEALED AND EXPANDABLE AND W/DISABLE |