| ADAQ |
BODY LENGTH |
1.175 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CQZP |
INPUT CIRCUIT PATTERN |
12 INPUT |
| CRHL |
BIT QUANTITY (NON-CORE) |
2048 |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+125.0 DEG CELSIUS |
| AFGA |
OPERATING TEMP RANGE |
+0.0/+70.0 DEG CELSIUS |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-1 MIL-M-38510 |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
2.0 WATTS |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
0.5 VOLTS MAXIMUM POWER SOURCE |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND EDGE TRIGGERED AND BURN IN, MIL-STD-883, CLASS B AND ERASABLE AND W/DECODED OUTPUT |
| ADAU |
BODY HEIGHT |
0.150 INCHES MAXIMUM |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| ADAT |
BODY WIDTH |
0.490 INCHES MINIMUM AND 0.550 INCHES MAXIMUM |
| CZEQ |
TIME RATING PER CHACTERISTIC |
650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| CQWX |
OUTPUT LOGIC FORM |
METAL OXIDE-SEMICONDUCTOR LOGIC |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CSWJ |
WORD QUANTITY (NON-CORE) |
256 |