| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| ADAU |
BODY HEIGHT |
0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM |
| ADAQ |
BODY LENGTH |
0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| CZEQ |
TIME RATING PER CHACTERISTIC |
50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CSWJ |
WORD QUANTITY (NON-CORE) |
32 |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CBBL |
FEATURES PROVIDED |
BIPOLAR AND PROGRAMMABLE AND HERMETICALLY SEALED AND SCHOTTKY AND W/OPEN COLLECTOR |
| ADAT |
BODY WIDTH |
0.302 INCHES MAXIMUM |
| CRHL |
BIT QUANTITY (NON-CORE) |
256 |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 PRINTED CIRCUIT |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| AFGA |
OPERATING TEMP RANGE |
+0.0/+75.0 DEG CELSIUS |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-1.2 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CQZP |
INPUT CIRCUIT PATTERN |
6 INPUT |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |