| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
15.0 VOLTS MAXIMUM POWER SOURCE |
| PRMT |
PRECIOUS MATERIAL |
GOLD |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| TTQY |
TERMINAL TYPE AND QUANTITY |
14 PRINTED CIRCUIT |
| CQZP |
INPUT CIRCUIT PATTERN |
2 INPUT |
| CQSJ |
INCLOSURE MATERIAL |
GLASS AND METAL |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
500.0 MILLIWATTS |
| CWSG |
TERMINAL SURFACE TREATMENT |
GOLD |
| ADAU |
BODY HEIGHT |
0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE |
| CBBL |
FEATURES PROVIDED |
HIGH GAIN AND NEGATIVE OUTPUTS AND HERMETICALLY SEALED AND HYBRID AND POSITIVE OUTPUTS AND INTERNALLY COMPENSATED AND W/FIELD EFFECT TRANSISTOR SWITCH |
| ADAT |
BODY WIDTH |
0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| PMLC |
PRECIOUS MATERIAL AND LOCATION |
TERMINALS GOLD AND BODY GOLD |
| CZEQ |
TIME RATING PER CHACTERISTIC |
200.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| ADAQ |
BODY LENGTH |
0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |