| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| ADAU |
BODY HEIGHT |
0.106 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| ADAT |
BODY WIDTH |
0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
14 PRINTED CIRCUIT |
| CBBL |
FEATURES PROVIDED |
HIGH RELIABILITY AND MONOLITHIC AND BURN IN |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| ABHP |
OVERALL LENGTH |
0.745 INCHES MINIMUM AND 0.770 INCHES MAXIMUM |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
4 GATE, AND |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
200.0 MILLIWATTS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| ADAQ |
BODY LENGTH |
0.745 INCHES MINIMUM AND 0.770 INCHES MAXIMUM |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD |
| CQZP |
INPUT CIRCUIT PATTERN |
QUAD 2 INPUT |
| ABMK |
OVERALL WIDTH |
0.300 INCHES MINIMUM AND 0.325 INCHES MAXIMUM |
| CZEQ |
TIME RATING PER CHACTERISTIC |
320.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 420.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| ABKW |
OVERALL HEIGHT |
0.281 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.5 VOLTS MINIMUM POWER SOURCE AND 18.0 VOLTS MAXIMUM POWER SOURCE |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |