| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
520.0 MILLIWATTS |
| AFGA |
OPERATING TEMP RANGE |
+0.0/+70.0 DEG CELSIUS |
| CZEQ |
TIME RATING PER CHACTERISTIC |
180.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 180.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CQZP |
INPUT CIRCUIT PATTERN |
14 INPUT |
| ADAT |
BODY WIDTH |
0.450 INCHES MAXIMUM |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| TEST |
TEST DATA DOCUMENT |
97942-581R888 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
30.0 VOLTS MAXIMUM POWER SOURCE |
| ADAQ |
BODY LENGTH |
1.090 INCHES MAXIMUM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
22 PRINTED CIRCUIT |
| ADAU |
BODY HEIGHT |
0.050 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| CQWX |
OUTPUT LOGIC FORM |
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CBBL |
FEATURES PROVIDED |
MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND W/ENABLE AND W/BUFFERED OUTPUT AND HERMETICALLY SEALED AND W/DECODED OUTPUT |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |