| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| ADAU |
BODY HEIGHT |
4.6 MILLIMETERS MAXIMUM |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CQZP |
INPUT CIRCUIT PATTERN |
11 INPUT |
| ABKW |
OVERALL HEIGHT |
8.2 MILLIMETERS NOMINAL |
| CBBL |
FEATURES PROVIDED |
EXPANDABLE AND COMPATIBLE DTL AND BIPOLAR AND HIGH SPEED AND MONOLITHIC |
| CZEQ |
TIME RATING PER CHACTERISTIC |
40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
4.5 VOLTS MAXIMUM POWER SOURCE |
| ADAT |
BODY WIDTH |
6.6 MILLIMETERS MAXIMUM |
| ABMK |
OVERALL WIDTH |
7.9 MILLIMETERS MAXIMUM |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| ADAQ |
BODY LENGTH |
22.1 MILLIMETERS MAXIMUM |
| ABHP |
OVERALL LENGTH |
22.1 MILLIMETERS MAXIMUM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 PRINTED CIRCUIT |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CRHL |
BIT QUANTITY (NON-CORE) |
1024 |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
0.5 MILLIWATTS |
| CQSJ |
INCLOSURE MATERIAL |
PLASTIC |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CSWJ |
WORD QUANTITY (NON-CORE) |
256 |